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Same model may have multiple batches, images only for reference.
RFG75N05E Intersil Corporation
Same model may have multiple batches, images only for reference.

RFG75N05E

Part No RFG75N05E
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 20 V
Vgs (Max) ±20V
Power Dissipation (Max) 240W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 660064-RFG75N05E
Ultra Librarian 3D Model Ultra Librarian RFG75N05E CAD Model

Description

The 660064-RFG75N05E is a N-Channel MOSFET designed for use in discrete semiconductor products from Harris Corporation.

  • Vdss: 50V
  • Id: 75A @ 25°C
  • Rds On: 8mOhm @ 75A and 10V Vgs
  • Vgs(th): 4V @ 250µA
  • Power Dissipation: 240W
  • Mounting: Through-Hole
  • Package: TO-247-3
  • Qg: 400nC @ 20V Vgs
  • Vgs: ±20V
  • Operating Temperature: -55°C to 175°C
  • Product Status: Active

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