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Same model may have multiple batches, images only for reference.
RFP3N45
Same model may have multiple batches, images only for reference.

RFP3N45

Part No RFP3N45
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 450 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 294093-RFP3N45
Ultra Librarian 3D Model Ultra Librarian RFP3N45 CAD Model

Description

The RFP3N45 is a N-Channel MOSFET transistor used in discrete semiconductor products.

  • Category: Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Drain to Source Voltage: 450V
  • Continuous Drain Current: 3A
  • Maximum On-Resistance: 3 Ohm @ 1.5A, 10V
  • Gate Threshold Voltage: 4V @ 1mA
  • Power Dissipation: 60W
  • Mounting: Through-Hole
  • Package: TO-220-3
  • Input Capacitance: 750pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Harris Corporation

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