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Same model may have multiple batches, images only for reference.
RFP6P10 Real Image
Same model may have multiple batches, images only for reference.

RFP6P10

Part No RFP6P10
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 660118-RFP6P10
Ultra Librarian 3D Model Ultra Librarian RFP6P10 CAD Model

Description

The RFP6P10 is a P-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 6A @ 25°C
  • Rds On (Max): 600mOhm @ 6A and 10V
  • Power Dissipation: 60W
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Input Capacitance (Ciss): 800pF @ 25V
  • Operating Temperature: -55°C to 150°C
  • Product Status: Active
  • Manufacturer: Harris Corporation

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