The 1SS119 is a silicon epitaxial planar diode manufactured by Hitachi, Ltd. It's designed for high-speed switching applications.

Applications:

• High-speed switching circuits
• Clipping circuits
• Clamping circuits
• Protection circuits
• Small signal rectification

Features:

• Fast reverse recovery time: Typically 4ns
• Low forward voltage drop
• High surge current capability
• Small package size for compact designs
• Epitaxial planar construction for reliability

Benefits:

• Efficient switching performance in high-frequency applications
• Minimal voltage loss in forward conduction
• Robust protection against transient surges
• Reduced PCB footprint due to its compact size
• Stable and dependable operation

Technical Specifications:

Type: Silicon Epitaxial Planar Diode

Forward Voltage (VF): 1.2V (Max) at IF = 100mA

Reverse Voltage (VR): 80V (Max)

Forward Current (IF): 100mA (Max)

Surge Current (IFSM): 1A (Max)

Reverse Recovery Time (trr): 4ns (Typical)

Junction Capacitance (CT): 4pF (Typical)

Operating Temperature Range: -65°C to +125°C