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2SD669

Part No 2SD669
Manufacturer Hitachi, Ltd
Catalog Transistors (BJT) - Single
Description Silicon NPN Epitaxial / Trans GP BJT NPN 120V 1.5A 3-Pin TO-126 Mod
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Hitachi, Ltd
Win Source Part Number 158291-2SD669
Popularity Medium
Supply and Demand Status Limited
Family Name 2SD669
Introduction Date November 26, 1999
ECCN EAR99
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SD669 CAD Model

Description

The 2SD669 power transistor exemplifies reliability and efficiency in a high-performance NPN silicon transistor. Known for its remarkable heat dissipation and robustness, it serves high-demand circuits requiring efficient power switching and amplification.

Features and Benefits

  • High Current Handling: Supports collector current handling up to 1.5A, catering to high-power applications.
  • Superior Heat Dissipation: Built to manage heat efficiently, minimizing the risk of thermal damage.
  • Reliable Construction: Durable and suitable for high-stress applications.
  • Multipurpose Usage: Adaptable for various circuit requirements, both in commercial and consumer electronics.

Applications

  • Power Amplifiers
  • Energy Management Systems
  • Telecom Transmitters
  • High-Frequency Power Supplies
  • Automotive Control Units

Additional Details:

The 2SD669's robust design makes it a preferred choice for projects necessitating higher power and thermal performance. It is crucial in applications involving stringent power management needs, safeguarding circuit operations with its impressive variability and performance over prolonged periods.

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