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2SK1933

Part No 2SK1933
Manufacturer Hitachi, Ltd
Catalog D - SUB, D - SHAPED connectors
Description Silicon N-Channel MOS FET
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Hitachi, Ltd
Win Source Part Number 1127154-2SK1933
Manufacturer Homepage www.renesas.com/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK1933 CAD Model

Description

The 2SK1933 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Hitachi, Ltd (now Renesas Electronics). MOSFETs are widely used as switching devices and amplifiers in electronic circuits. The 2SK1933 is designed for high-speed switching applications, offering low on-resistance and high current capabilities.

Applications

  • Switching regulators: Used in DC-DC converters and power supplies for efficient power conversion.
  • Motor control: Employed in motor drivers for controlling the speed and direction of electric motors.
  • DC-AC inverters: Found in inverters for converting DC power to AC power.
  • Solid-state relays: Utilized in solid-state relays for switching high-current loads.
  • High-frequency switching: Used in high-frequency power converters and amplifiers.
  • Power amplifiers: Integrated in audio and RF power amplifiers for signal amplification.

Features

  • N-channel MOSFET: Enhances current flow for efficient switching.
  • Low on-resistance (RDS(on)): Minimizes power loss during switching.
  • High drain current (ID): Supports high current switching applications.
  • High-speed switching: Enables fast switching speeds for efficient power conversion.
  • Avalanche energy rated: Withstands high avalanche energy during inductive switching.
  • TO-220 package: Provides easy mounting and heat dissipation.

Benefits

  • Efficient power conversion: Low on-resistance reduces power losses in switching applications.
  • High current capability: Supports high current loads for versatile applications.
  • Fast switching speed: Enables efficient and high-frequency power conversion.
  • Robust performance: Avalanche energy rating ensures reliable performance under transient conditions.
  • Easy to use: TO-220 package facilitates easy mounting and thermal management.

Additional Details

The 2SK1933 MOSFET is designed to meet the demands of modern power electronics. Its low on-resistance and high-speed switching capabilities make it an excellent choice for efficient power conversion and control. Detailed specifications such as drain-source voltage (VDSS), gate-source voltage (VGSS), drain current (ID), on-resistance (RDS(on)), and thermal resistance can be found in the product datasheet provided by Renesas Electronics. Ensure proper heat sinking to maximize performance and reliability.

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