The H5TQ4G63EFR-RDI is a 4Gb DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by Hynix Semiconductor. This memory component is designed for applications requiring high memory capacity and high-speed data access. Its typical organization is 256M x 16.

Applications

• Desktop and Laptop Computers
• Graphics Cards
• Gaming Consoles
• Networking Equipment (Routers, Switches)
• Embedded Systems

Features

• Capacity: 4Gb (256M x 16)
• Interface: DDR3 SDRAM
• Operating Voltage: 1.5V (Typical)
• Speed Grade: RDI (Determines the maximum clock frequency and data transfer rate)
• Data Rate: Supports data transfer rates depending on the specific RDI speed grade.
• Clock Frequency: Operates at a clock frequency determined by the speed grade.
• Package: FBGA (Fine-Pitch Ball Grid Array)
• RoHS Compliant: Lead-free and compliant with RoHS environmental standards.
• Power-Saving Features: Includes features to reduce power consumption during idle states.
• Double Data Rate: Transfers data on both the rising and falling edges of the clock signal.

Benefits

• High Capacity: 4Gb capacity suitable for applications requiring large memory space.
• High Bandwidth: DDR3 technology provides a significant improvement in bandwidth.
• Low Power Consumption: Operates at 1.5V, reducing power consumption.
• Improved Performance: Enhanced data transfer rates improve system performance.
• Cost-Effective: DDR3 offers a good balance of performance and cost.
• Wide Availability: DDR3 memory is widely available and supported.
• Reliable Operation: Designed for stable and reliable performance.

Additional Details

The RDI speed grade defines the maximum supported clock frequency and data transfer rate for this chip. Consult the Hynix datasheet for precise specifications. The FBGA package allows for a compact footprint and efficient thermal dissipation. DDR3 SDRAM utilizes a prefetch architecture to enhance data throughput. This chip is typically used in memory modules.