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HMA81GU6CJR8N-VKT0

Part No HMA81GU6CJR8N-VKT0
Manufacturer Hynix Semiconductor
Catalog Memory - Modules
Description DDR4-2666V 1Gx64 UDIMM 1Rx8 (8GB)
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ECAD Module
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Categories Memory - Modules
Win Source Part Number 946438-HMA81GU6CJR8N-VKT0
Series *
Ultra Librarian 3D Model Ultra Librarian HMA81GU6CJR8N-VKT0 CAD Model

Description

The Hynix HMA81GU6CJR8N-VKT0 is a high-performance DDR4 SDRAM unbuffered DIMM (Unbuffered Dual Inline Memory Module) designed for use in desktop computers and workstations. This module provides a substantial boost in memory capacity and speed, enhancing overall system performance.

Applications:

  • Desktop PCs
  • Workstations
  • High-performance computing systems
  • Gaming PCs

Features:

  • 8GB DDR4 Memory
  • PC4-2666V (2666MHz) Speed
  • Unbuffered DIMM (UDIMM)
  • 288-Pin
  • CL19 CAS Latency
  • 1.2V Operating Voltage
  • Non-ECC

Benefits:

  • Increased system responsiveness and faster application loading times.
  • Improved multitasking capabilities, allowing users to run multiple applications simultaneously without performance degradation.
  • Enhanced gaming experience with smoother frame rates and reduced latency.
  • Higher bandwidth for data-intensive tasks such as video editing and 3D rendering.
  • Energy-efficient operation due to the low 1.2V operating voltage.

Additional Details:

The HMA81GU6CJR8N-VKT0 module is designed to meet the demanding requirements of modern computing. The DDR4 technology offers significant improvements over previous generations of memory, including higher speeds, greater bandwidth, and lower power consumption. The 2666MHz clock speed enables rapid data transfer between the memory and the processor, leading to faster overall system performance. The module is also non-ECC, which may make it more suitable for consumer or gaming applications where some data error can be tolerated, rather than mission critical environments.

The 288-pin design ensures compatibility with a wide range of DDR4-compatible motherboards. The unbuffered design simplifies the memory architecture, making it more cost-effective while still delivering excellent performance. The CL19 CAS latency represents the delay between the time a memory controller tells the memory module to access a particular memory column and the time the data from the given array location is available on the module's output pins. While a lower number means faster response, CL19 is within the typical range for this module's speed grade.

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