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HY628100ALG10

Part No HY628100ALG10
Manufacturer Hynix Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 964181-HY628100ALG10
Categories OEM Parts(F-I)
Manufacturer Hynix Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian HY628100ALG10 CAD Model

Description

The HY628100ALG10 is a high-speed, low-power CMOS Static RAM (SRAM) manufactured by Hynix Semiconductor (now SK Hynix). It is a 1M-bit memory organized as 128K x 8 bits. This SRAM is designed for applications requiring fast access times and low power consumption, making it suitable for various embedded systems, portable devices, and cache memory applications.

Applications:

  • Cache memory in embedded systems
  • Buffer memory in data acquisition systems
  • Portable electronic devices (e.g., handheld computers, PDAs)
  • Industrial control systems
  • Medical devices

Features:

  • High-speed access time: 10 ns
  • Low power consumption: Active and Standby modes
  • Single 5V power supply
  • TTL compatible inputs and outputs
  • Fully static operation: No clock or refresh required
  • Data retention voltage: 2V (min)
  • Available in various packages (e.g., DIP, SOP)

Benefits:

  • Fast data access: The 10ns access time ensures quick data retrieval, improving system performance.
  • Low power operation: Reduces power consumption, extending battery life in portable applications and minimizing heat dissipation in other systems.
  • Easy integration: TTL compatible I/O simplifies interfacing with other digital components.
  • Simple operation: Fully static operation eliminates the need for complex clocking or refresh circuitry, simplifying system design.
  • Wide operating voltage range: Enables reliable operation across a range of supply voltages.

Additional Details:

The HY628100ALG10 SRAM operates from a single 5V power supply. It has separate chip enable (CE), output enable (OE), and write enable (WE) inputs for easy control. The device offers low standby current, further reducing power consumption when not actively accessed. The data retention voltage of 2V ensures that data is preserved even when the power supply drops. The HY628100ALG10 is available in various packages, including DIP (Dual Inline Package) and SOP (Small Outline Package), allowing for flexible integration into different board layouts. For detailed specifications, including timing diagrams, operating conditions, and package dimensions, refer to the official SK Hynix datasheet.

This SRAM is a reliable and high-performance memory solution for applications demanding speed and low power. Its fully static operation and TTL compatibility make it easy to integrate into various digital systems. The HY628100ALG10 provides a cost-effective and efficient memory solution for a wide range of applications.

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