The HY628100ALT1-70 is a high-speed, low-power CMOS static RAM (SRAM) manufactured by Hynix Semiconductor. This SRAM offers a storage capacity of 1Mbit, organized as 128K x 8 bits. It is designed for applications requiring fast access times and low power consumption, making it suitable for a variety of memory-intensive tasks.

Applications

• Cache memory in embedded systems.
• Buffer memory in communication equipment.
• Data storage in portable devices.
• Industrial control systems.
• Networking equipment.

Features

• Access time of 70ns.
• Low power consumption.
• Single 5V power supply.
• Fully static operation, no clock required.
• TTL compatible inputs and outputs.
• Three-state output.
• Available in various package options (e.g., DIP, SOJ, TSOP).

Benefits

• Fast data access for high-performance applications.
• Reduced power consumption for extended battery life in portable devices.
• Simplified system design with single power supply requirement.
• Easy integration with standard logic circuits.
• Flexible mounting options with different package types.
• Reliable data retention due to static operation.

Technical Specifications

The HY628100ALT1-70 operates on a single 5V power supply. It features a fast access time of 70ns, allowing for quick read and write operations. The SRAM is fully static, meaning that data is retained as long as power is applied, without the need for refresh cycles. The inputs and outputs are TTL compatible, ensuring seamless integration with standard logic circuits. The device has a three-state output, enabling it to be easily connected to a shared bus. It is available in different package options, such as DIP, SOJ, and TSOP, catering to various board layout requirements. The operating temperature range is typically from -40°C to +85°C, allowing for use in industrial environments.