The HY62C256LP-10 is a 256Kbit Static Random Access Memory (SRAM) chip produced by Hynix Semiconductor. It is arranged as 32K x 8 bits and is optimized for applications that prioritize fast access times and low power consumption. SRAM is known for its high speed and does not need to be refreshed periodically, making it well-suited for cache memory, portable devices, and battery-backed systems.

Applications

• Portable electronic devices where low power consumption is critical.
• Cache memory in embedded systems.
• Battery-backed systems requiring non-volatile data storage.
• Instrumentation and measurement equipment.
• Industrial control systems.

Features

• Organization: 32K x 8 bits
• Access Time: 100 ns
• Supply Voltage: 5V
• Package: DIP28 or SOIC28
• Operating Temperature: -40°C to +85°C
• Low Power Consumption: Extends battery life in portable devices.
• TTL Compatible Inputs and Outputs: Simplifies integration with other logic components.
• Data Retention Voltage: Low voltage data retention for battery backup.

Benefits

• Fast access times enable quick data processing.
• Low power consumption prolongs battery life.
• Data retention capabilities ensure data integrity even when power is lost.
• Simple integration with standard TTL logic.
• Wide operating temperature range for reliable operation in diverse environments.

Additional Details

The HY62C256LP-10 utilizes advanced SRAM technology to achieve a balance of high speed and low power consumption. Its low data retention voltage makes it well-suited for battery-backed applications, where data must be preserved even when the main power source is unavailable. Available in industry-standard DIP28 and SOIC28 packages, it is easy to integrate into various designs.

The wide operating temperature range ensures robust performance in a variety of environmental conditions. It's great for battery applications demanding memory.