Applications:

• High-frequency power amplifiers
• Oscillator circuits
• RF applications
• High speed switching

Features:

• High transition frequency: This transistor boasts a high transition frequency, enabling it to perform effectively in high-frequency circuits.
• Low saturation voltage: The low saturation voltage helps reduce power loss and improve efficiency in switching applications.
• High power dissipation: Offers high power dissipation capabilities for demanding applications.
• Epitaxial planar silicon structure: Ensures reliable performance and consistent characteristics.

Benefits:

• Improved circuit performance: The high transition frequency and low saturation voltage contribute to improved performance in high-frequency and switching circuits.
• Increased efficiency: Low saturation voltage reduces power loss, improving overall efficiency.
• Reliable operation: The epitaxial planar silicon structure ensures reliable and stable operation.
• Versatile Usage: Suitable for a broad range of applications including RF amplifiers and oscillators.

Technical Specifications (Typical):

• Collector-Base Voltage (VCBO): 60V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 1A
• Collector Dissipation (PC): 10W
• Transition Frequency (fT): 100 MHz

The 2SC5803 is typically supplied in a through-hole package (e.g., TO-126) for ease of mounting and heat dissipation.