The FMV09N70E is a high-voltage N-channel power MOSFET from Inchange Semiconductor Company Limited. It is designed for high-efficiency switching applications and features a high breakdown voltage and low on-resistance. This MOSFET is suitable for various power electronics applications requiring reliable and efficient performance.

Applications

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• Uninterruptible power supplies (UPS)
• Lighting applications
• Motor control circuits

Features

• N-channel enhancement mode MOSFET
• High voltage capability (700V)
• Low on-resistance (RDS(on))
• Fast switching speed
• Avalanche rated
• TO-220F package

Benefits

• Increased energy efficiency due to low RDS(on)
• Reduced power losses in switching applications
• Improved system reliability
• Simplified thermal management
• Suitable for high-frequency applications

Additional Details

The FMV09N70E features a drain-source voltage (VDS) of 700V, a continuous drain current (ID) of 9A, and a pulsed drain current (IDM) of 27A. The gate-source voltage (VGS) is rated at ±30V. The MOSFET exhibits a low on-resistance (RDS(on)) of typically 1.2 ohms at VGS = 10V. The total gate charge (Qg) is typically 16 nC. This MOSFET is available in a TO-220F package, which provides good thermal performance. The operating junction temperature range is -55°C to +150°C. Its fast switching characteristics make it suitable for high-frequency applications, further enhancing efficiency. The advanced design and manufacturing processes ensure the high quality and reliability of the FMV09N70E, making it a suitable choice for various power electronics applications requiring a high voltage MOSFET.