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FMV09N70E

Part No FMV09N70E
Manufacturer Inchange Semiconductor Company Limited
Catalog OEM Parts (F - I)
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Win Source Part Number 1059507-FMV09N70E
Categories OEM Parts(F-I)
Manufacturer Inchange Semiconductor Company Limited
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FMV09N70E CAD Model

Description

The FMV09N70E is a high-voltage N-channel power MOSFET from Inchange Semiconductor Company Limited. It is designed for high-efficiency switching applications and features a high breakdown voltage and low on-resistance. This MOSFET is suitable for various power electronics applications requiring reliable and efficient performance.

Applications

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • Lighting applications
  • Motor control circuits

Features

  • N-channel enhancement mode MOSFET
  • High voltage capability (700V)
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Avalanche rated
  • TO-220F package

Benefits

  • Increased energy efficiency due to low RDS(on)
  • Reduced power losses in switching applications
  • Improved system reliability
  • Simplified thermal management
  • Suitable for high-frequency applications

Additional Details

The FMV09N70E features a drain-source voltage (VDS) of 700V, a continuous drain current (ID) of 9A, and a pulsed drain current (IDM) of 27A. The gate-source voltage (VGS) is rated at ±30V. The MOSFET exhibits a low on-resistance (RDS(on)) of typically 1.2 ohms at VGS = 10V. The total gate charge (Qg) is typically 16 nC. This MOSFET is available in a TO-220F package, which provides good thermal performance. The operating junction temperature range is -55°C to +150°C. Its fast switching characteristics make it suitable for high-frequency applications, further enhancing efficiency. The advanced design and manufacturing processes ensure the high quality and reliability of the FMV09N70E, making it a suitable choice for various power electronics applications requiring a high voltage MOSFET.

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