The IPA65R400CE is a CoolMOS™ CE series power MOSFET from Inchange Semiconductor Company Limited. This MOSFET is designed for high-efficiency switched-mode power supplies (SMPS) and other power electronic applications. It offers a good balance between conduction and switching losses, making it suitable for a wide range of power levels.

Applications

• Switched-Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• DC-DC converters
• Lighting ballasts
• Motor drives

Features

• 650V Drain-Source Voltage (VDS)
• Low On-Resistance (RDS(on)) of 0.400 Ohm (typical)
• High Avalanche Ruggedness
• Integrated Gate Resistor
• Reduced Gate Charge (Qg)
• Pb-free lead plating; RoHS compliant

Benefits

• Improved Efficiency: The low on-resistance minimizes conduction losses, contributing to higher overall efficiency in power conversion systems.
• Simplified Design: The integrated gate resistor simplifies the gate drive circuit design.
• Enhanced Reliability: High avalanche ruggedness ensures robust performance under transient conditions.
• Reduced Switching Losses: Reduced gate charge lowers switching losses at higher frequencies.
• Environmentally Friendly: Pb-free and RoHS compliant, meeting environmental regulations.

Additional Details

The IPA65R400CE is fabricated using a superjunction technology, which allows for a significant reduction in on-resistance and gate charge compared to conventional MOSFETs. This leads to improved efficiency and power density. The device is typically supplied in a TO-220 or similar package, depending on the specific variant.

Technical Specifications:

• VDS (Drain-Source Voltage): 650V
• RDS(on) (On-Resistance): 0.400 Ohm (typical)
• ID (Drain Current): Varies with package and operating conditions; consult datasheet for specific values
• Qg (Gate Charge): Consult datasheet for specific value
• Package Type: TO-220 or equivalent

Designers should consult the manufacturer's datasheet for the most up-to-date and accurate specifications before using this product in any application.