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Same model may have multiple batches, images only for reference.
2ED2109S06FXUMA1
Same model may have multiple batches, images only for reference.

2ED2109S06FXUMA1

Part No 2ED2109S06FXUMA1
Manufacturer Infineon Technologies
Catalog PMIC - Gate Drivers
Description IC HALF BRIDGE GATE DRIVER 650V
Datasheet
2ED2109S06FXUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Mfr Infineon Technologies
Series -
Package Tape & Reel
Product Status Active
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 1
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 1.1V, 1.7V
Current - Peak Output (Source, Sink) 290mA, 700mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 650 V
Rise / Fall Time (Typ) 100ns, 35ns
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8-53
Base Product Number 2ED2109
MSL Level 2 (1 Year)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1372563-2ED2109S06FXUMA1
Ultra Librarian 3D Model Ultra Librarian 2ED2109S06FXUMA1 CAD Model

Description

The 1372563-2ED2109S06FXUMA1 is an integrated circuit (IC) power management gate driver designed by Infineon Technologies.

  • Series: 2ED2109
  • Package: 8-SOIC
  • Application: Half-Bridge
  • Input Type: Non-Inverting
  • Voltage Supply: 10V to 20V
  • Rise/Fall Time: 100ns/35ns
  • Gate Type: IGBT, N-Channel MOSFET
  • Peak Output Current (Source): 290mA
  • Peak Output Current (Sink): 700mA
  • High Side Voltage: 650V
  • RoHS: Compliant
  • REACH: Unaffected
  • Status: Active

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