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Same model may have multiple batches, images only for reference.
AUIRF1010ZS Real Image
Same model may have multiple batches, images only for reference.

AUIRF1010ZS

Part No AUIRF1010ZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
AUIRF1010ZS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1020696-AUIRF1010ZS
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AUIRF1010ZS CAD Model

Description

The Infineon Technologies 1020696-AUIRF1010ZS is a N-channel MOSFET transistor that comes with a drain-source breakdown voltage of 55V and a continuous drain current of 75A (Tc) @ 25°C.

  • Manufacturer: Infineon Technologies
  • Product Name: 1020696-AUIRF1010ZS
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Maximum Rds On: 7.5 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 95nC @ 10V
  • Maximum Input Capacitance: 2840pF @ 25V
  • Package: D2PAK
  • Mounting: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, SMD (SMT)
  • Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products

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