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AUIRF2804S

Part No AUIRF2804S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 6450pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1020703-AUIRF2804S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRF2804S CAD Model

Description

The Infineon Technologies AUIRF2804S is an N-channel MOSFET with a power dissipation (Max) of 300W (Tc).

  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 195A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Mounting Technology: SMD (SMT)
  • Package: Tube/Rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.7732 $52.8248
29+ $3.5344 $102.4976
44+ $3.4150 $150.2600
63+ $3.1762 $200.1006
82+ $3.0568 $250.6576
103+ $2.9374 $302.5522
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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