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AUIRF7342QTR

Part No AUIRF7342QTR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 55V 3.4A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 105 mOhm @ 3.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 690pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046614-AUIRF7342QTR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRF7342QTR CAD Model

Description

The Infineon Technologies IRL7342QTR is a dual P-channel logic level gate FET transistor.

  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 3.4A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Rds On: 105 mOhm @ 3.4A, 10V
  • Package: 8-SO
  • Applications: Power Management and Load Switching

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.5821 $70.7463
5+ $22.0896 $110.4480
8+ $21.3433 $170.7464
11+ $19.8508 $218.3588
14+ $19.1045 $267.4630
17+ $18.3583 $312.0911
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,340 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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