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Same model may have multiple batches, images only for reference.
AUIRF9952QTR Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRF9952QTR

Part No AUIRF9952QTR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Datasheet
AUIRF9952QTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A, 2.3A
Maximum Rds On at Id,Vgs 100 mOhm @ 2.2A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 190pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1020733-AUIRF9952QTR
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Communications & Networking, Consumer Electronics, Power Management
Ultra Librarian 3D Model Ultra Librarian AUIRF9952QTR CAD Model

Description

The Infineon AUIRF9952QTR is an N and P-Channel FET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 3.5A, 2.3A.

  • Manufacturer: Infineon
  • Type: N and P-Channel FET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.5A, 2.3A
  • Gate Type: Logic Level
  • Package: 8-SO
  • Power Dissipation: 2W
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 190pF @ 15V
  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 2.2A, 10V
  • Applications: Industrial, Communications & Networking, Consumer Electronics, and Power Management

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