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Same model may have multiple batches, images only for reference.
AUIRF9Z34N
Same model may have multiple batches, images only for reference.

AUIRF9Z34N

Part No AUIRF9Z34N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET P CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, HEXFET®
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 388 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 435377-AUIRF9Z34N
Ultra Librarian 3D Model Ultra Librarian AUIRF9Z34N CAD Model

Description

The AUIRF9Z34N is a P-Channel MOSFET transistor designed for automotive applications.

  • Drain to Source Voltage: 55V
  • Continuous Drain Current: 19A
  • On-Resistance: 100mOhm @ 10A, 10V
  • Mounting: Through-Hole
  • Package: TO-220-3
  • Series: HEXFET from Infineon Technologies
  • Gate Charge: 35nC @ 10V
  • Temperature Range: -55°C to 175°C
  • Product Status: Active
  • Application: Automotive electronic systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2091 $58.5480
675+ $0.1721 $116.1675
1,045+ $0.1663 $173.7835
1,440+ $0.1605 $231.1200
1,855+ $0.1559 $289.1945
2,480+ $0.1398 $346.7040
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Availability: 102,600 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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