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Same model may have multiple batches, images only for reference.
AUIRFL024N Real Image
Same model may have multiple batches, images only for reference.

AUIRFL024N

Part No AUIRFL024N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 2.8A SOT-223
Datasheet
AUIRFL024N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Standard Package 80 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567130-AUIRFL024N
Ultra Librarian 3D Model Ultra Librarian AUIRFL024N CAD Model

Description

The AUIRFL024N is an N-channel MOSFET transistor from the HEXFET series.

  • Application: Discrete semiconductor
  • Drain-to-Source Voltage: 55V
  • Continuous Drain Current: 2.8A
  • On-Resistance: 75mOhm (maximum) @ Vgs=10V, Id=2.8A
  • Temperature Range: -55°C to 150°C
  • Package: Surface mount
  • Features: Low gate charge and input capacitance
  • Product Status: Obsolete
  • Manufacturer: Infineon Technologies

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76+ $4.5703 $347.3428
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