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Same model may have multiple batches, images only for reference.
SI4403DY-T1-E3
Same model may have multiple batches, images only for reference.

SI4403DY-T1-E3

Part No SI4403DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 20 Volt 9.0 Amp 2.5W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 6.5 A
Drain to Source Resistance 17 mΩ
Drain to Source Voltage (Vdss) -20 V
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 8 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.35 W
Min Operating Temperature -55 °C
Number of Channels 1
Power Dissipation 1.35 W
Rise Time 30 ns
RoHS Compliant
Turn-Off Delay Time 110 ns
Turn-On Delay Time 30 ns
Weight 506.605978 mg
Width 4 mm
Win Source Part Number 962222-SI4403DY-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4403DY-T1-E3 CAD Model

Description

The Vishay SI4403DY-T1-E3 is a Transistors - FETs, MOSFETs - RF product.

  • Length: 5 mm
  • Mounting: SMD (SMT)
  • Drain to Source Voltage (Vdss): -20 V
  • Power Dissipation: 1.35 W
  • Height: 1.55 mm
  • Weight: 506.605978 mg
  • Number of Channels: 1
  • Width: 4 mm
  • Rise Time: 30 ns
  • Fall Time: 30 ns
  • Case / Package: SO
  • Popularity: Low
  • Maximum Operating Temperature: 150 °C
  • RoHS: Compliant
  • Minimum Operating Temperature: -55 °C
  • Element Configuration: Single
  • Max Power Dissipation: 1.35 W
  • Turn-On Delay Time: 30 ns
  • Continuous Drain Current (ID): 6.5 A
  • Turn-Off Delay Time: 110 ns
  • Drain to Source Resistance: 17 mΩ
  • Gate to Source Voltage (Vgs): 8 V

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