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Same model may have multiple batches, images only for reference.
AUIRFR2405 Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRFR2405

Part No AUIRFR2405
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Datasheet
AUIRFR2405 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020749-AUIRFR2405
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian AUIRFR2405 CAD Model

Description

The Infineon Technologies AUIRFR2405 is an N-Channel MOSFET that features a drain-source breakdown voltage of 55V, a continuous drain current of 30A at 25°C, and a maximum power dissipation of 110W.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 30A
  • Power Dissipation: 110W
  • Package: D-PAK (TO-252AA)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Rds On: 16 mOhm @ 34A and 10V
  • Application: Discrete Semiconductor Products
  • Compliance: Halogen Free
  • Package Quantity: 75 units

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