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Same model may have multiple batches, images only for reference.
AUIRFR3710Z Real Image
Same model may have multiple batches, images only for reference.

AUIRFR3710Z

Part No AUIRFR3710Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 42A DPAK
Datasheet
AUIRFR3710Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 2930pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020752-AUIRFR3710Z
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian AUIRFR3710Z CAD Model

Description

The Infineon Technologies AUIRFR3710Z is an N-channel MOSFET transistor that has a surface mount termination and comes in a D-Pak case/package.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 42A (Tc)
  • Power Dissipation: 140W (Tc)
  • Maximum Gate Charge: 100nC @ 10V
  • Maximum Input Capacitance: 2930pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.1871 $50.9936
39+ $2.6150 $101.9850
60+ $2.5333 $151.9980
82+ $2.4516 $201.0312
106+ $2.3699 $251.2094
142+ $2.1247 $301.7074
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,915 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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