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Same model may have multiple batches, images only for reference.
AUIRFS3004TRL Real Image
Same model may have multiple batches, images only for reference.

AUIRFS3004TRL

Part No AUIRFS3004TRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 340A D2PAK
Datasheet
AUIRFS3004TRL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 9200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 1.75 mOhm @ 195A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020765-AUIRFS3004TRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRFS3004TRL CAD Model

Description

The Infineon Technologies 1020765-AUIRFS3004TRL MOSFET is a high-performance N-channel device that is ideal for use in a variety of applications.

  • Channel Type: N-Channel
  • Maximum Power Dissipation: 380W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 195A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 240nC @ 10V
  • Maximum Rds On @ Id, Vgs: 1.75 mOhm @ 195A, 10V
  • Package: D-PAK
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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