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AUIRFSL3206

Part No AUIRFSL3206
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET N CHANNEL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 6540 pF @ 50 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567187-AUIRFSL3206
Ultra Librarian 3D Model Ultra Librarian AUIRFSL3206 CAD Model

Description

The AUIRFSL3206 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120A @ 25°C
  • Rds On (Max): 3mOhm @ 75A and 10V
  • Power Dissipation: 300W
  • Mounting Type: through-hole
  • Package: TO-262-3 Long Leads
  • Gate Charge (Qg): 170nC @ 10V
  • Input Capacitance (Ciss): 6540pF @ 50V
  • Operating Temperature Range: -55°C to 175°C
  • REACH Regulation: unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0184 $50.9200
120+ $0.8357 $100.2840
190+ $0.8095 $153.8050
260+ $0.7834 $203.6840
335+ $0.7573 $253.6955
445+ $0.6790 $302.1550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,200 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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