The Infineon Technologies 862675-AUIRFSL8407 is a discrete semiconductor product that belongs to the category of FETs and MOSFETs.

• Series: HEXFET®
• FET Type: MOSFET (Metal Oxide), N-Channel
• Drain to Source Voltage (Vdss): 40V
• Continuous Drain Current (Id) @ 25°C: 195A
• Maximum On-Resistance (Rds On) @ 100A and 10V gate-source voltage (Vgs): 2mOhm
• Maximum Gate-Source Threshold Voltage (Vgs(th)) @ specified drain current (Id): 4V @ 150µA
• Maximum Power Dissipation @ case temperature (Tc): 230W
• Mounting Type: Through-Hole
• Package: TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package: TO-262
• Gate Charge (Qg) @ specified gate-source voltage (Vgs): 225nC @ 10V
• Input Capacitance (Ciss) @ specified drain-source voltage (Vds): 7330pF @ 25V
• Maximum Gate-Source Voltage (Vgs): ±20V
• Temperature Range: -55°C to 175°C
• ECCN: EAR99
• MSL Level: 1 (Unlimited)
• REACH: Unaffected
• HTSUS Code: 8541.29.0095
• Base Product Number: AUIRFSL8407
• Status: Active