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Same model may have multiple batches, images only for reference.
AUIRFZ44ZS International Rectifier
Same model may have multiple batches, images only for reference.

AUIRFZ44ZS

Part No AUIRFZ44ZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 51A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 25 V
Power Dissipation (Max) 80W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567199-AUIRFZ44ZS
Ultra Librarian 3D Model Ultra Librarian AUIRFZ44ZS CAD Model

Description

The AUIRFZ44ZS is an N-channel MOSFET transistor from the HEXFET series. It is designed for discrete semiconductor applications and offers a drain-to-source voltage rating of 55V.

  • Channel Type: N-Channel
  • Series: HEXFET
  • Application: Discrete Semiconductor
  • Drain-to-Source Voltage: 55V
  • Continuous Drain Current: 51A
  • On-Resistance (Maximum): 13.9mOhm @ Vgs=10V, Id=31A
  • Operating Temperature: -55°C to 175°C
  • Package: Surface Mount
  • Features: Low Gate Charge, Low Input Capacitance
  • Status: Active
  • Manufacturer: Infineon Technologies

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