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Same model may have multiple batches, images only for reference.
AUIRLL2705TR Real Image
Same model may have multiple batches, images only for reference.

AUIRLL2705TR

Part No AUIRLL2705TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 5.2A SOT223
Datasheet
AUIRLL2705TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 870pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1020807-AUIRLL2705TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRLL2705TR CAD Model

Description

The Infineon Technologies 1020807-AUIRLL2705TR is a N-Channel MOSFET transistor that is designed for use in electronic devices.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 5.2A (Ta)
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 3.8A, 10V
  • Mounting: Surface mounted
  • Package: PG-SOT223
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,600 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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