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Same model may have multiple batches, images only for reference.
AUIRLR2703 Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRLR2703

Part No AUIRLR2703
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A DPAK
Datasheet
AUIRLR2703 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020810-AUIRLR2703
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian AUIRLR2703 CAD Model

Description

The Infineon Technologies 424998 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 45W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 20A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Gate Charge: 15nC @ 4.5V
  • Input Capacitance: 450pF @ 25V
  • Rds On @ Id,Vgs: 45 mOhm @ 14A, 10V
  • Case/Package: D-Pak
  • Mounting: SMD (SMT)
  • Package Quantity: 75 per package

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