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Same model may have multiple batches, images only for reference.
AUIRLR2908 Real Image
Same model may have multiple batches, images only for reference.

AUIRLR2908

Part No AUIRLR2908
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A DPAK
Datasheet
AUIRLR2908 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 33nC @ 4.5V
Max Input Capacitance 1890pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020813-AUIRLR2908
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRLR2908 CAD Model

Description

The Infineon Technologies MOSFET is a high-power N-Channel transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 120W (Tc)
  • Mounting Type: SMD (SMT)
  • Package: D-PAK (TO-252AA)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 33nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 28 mOhm @ 23A, 10V
  • Popularity: Popular
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.9240 $65.5440
13+ $8.9628 $116.5164
20+ $8.6833 $173.6660
28+ $8.4026 $235.2728
36+ $8.1231 $292.4316
48+ $7.2823 $349.5504
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,400 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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