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BC818K-40E6327

Part No BC818K-40E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description BIPOLAR GEN PURPOSE TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V
Power - Max 500 mW
Frequency - Transition 170MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
Standard Package 6,951 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 818830-BC818K-40E6327
Ultra Librarian 3D Model Ultra Librarian BC818K-40E6327 CAD Model

Description

The 818830-BC818K-40E6327 is a single bipolar transistor specifically designed for automotive applications.

  • Package quantity: 6,951 pieces
  • Maximum power dissipation: 500 mW
  • Voltage breakdown: 25 V
  • Maximum collector current: 500 mA
  • Vce saturation @ maximum Ib and Ic: 700mV @ 50mA and 500mA
  • DC current gain (hFE): 250 @ 100mA @ 1V
  • Frequency transition: 170MHz
  • Package: TO-236-3

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