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Same model may have multiple batches, images only for reference.
BC846SE6327BTSA1 Real Image
Same model may have multiple batches, images only for reference.

BC846SE6327BTSA1

Part No BC846SE6327BTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 65V 0.1A SOT363
Datasheet
BC846SE6327BTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 250mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1022429-BC846SE6327BTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC846SE6327BTSA1 CAD Model

Description

The BC846SE6327BTSA1 manufactured by Infineon Technologies is a dual NPN transistor with a maximum collector-emitter breakdown voltage of 65V.

  • Collector-Emitter Breakdown Voltage: 65V
  • Current Collector: 100mA
  • Frequency Transition: 250MHz
  • Transistor Polarity: 2 NPN
  • Package: PG-SOT363-6
  • Collector Cut-Off Current: 15nA
  • Typical Gain (hFE): 200 @ 2mA, 5V
  • Power Dissipation: 250mW
  • Category: Discrete Semiconductor Product
  • Status: obsolete (EOL)
  • Operating Temperature: up to 150°C (TJ)
  • Packaging: reel
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 355 pcs
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