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BC858AE6327HTSA1

Part No BC858AE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.1A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Series -
Package Tape & Reel
Product Status Last Time Buy
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V
Power - Max 330 mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
Base Product Number BC858
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377964-BC858AE6327HTSA1
Ultra Librarian 3D Model Ultra Librarian BC858AE6327HTSA1 CAD Model

Description

The BC858AE6327HTSA1 is a single bipolar transistor from Infineon Technologies.

  • Transistor Type: PNP
  • Collector Current (Ic): 100mA Max
  • Collector-Emitter Breakdown Voltage: 30V Max
  • DC Current Gain (hFE): 125 @ 2mA, 5V
  • Vce Saturation: 650mV @ 5mA, 100mA
  • Package: TO-236-3, SC-59, SOT-23-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
905+ $0.0641 $58.0105
2,195+ $0.0527 $115.6765
3,395+ $0.0511 $173.4845
4,685+ $0.0494 $231.4390
6,055+ $0.0477 $288.8235
8,110+ $0.0427 $346.2970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 905 pcs
Order Increment : 1 pcs
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