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Same model may have multiple batches, images only for reference.
BCR 146T E6327 Real Image
Same model may have multiple batches, images only for reference.

BCR 146T E6327

Part No BCR 146T E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SC75
Datasheet
BCR 146T E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 50 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 150MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 1022693-BCR 146T E6327
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Lighting, LED Lighting
Ultra Librarian 3D Model Ultra Librarian BCR 146T E6327 CAD Model

Description

The Infineon Technologies BCR 146T E6327 is an NPN-Pre-Biased transistor that operates at a maximum current collector of 70mA and a maximum power dissipation of 250mW.

  • Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 50 @ 5mA, 5V
  • Resistor-Base (R1) (Ohms): 47k
  • Resistor-Emitter Base (R2) (Ohms): 22k
  • Package: PG-SC-75

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