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Same model may have multiple batches, images only for reference.
BCR 192 B6327 Real Image
Same model may have multiple batches, images only for reference.

BCR 192 B6327

Part No BCR 192 B6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT23-3
Datasheet
BCR 192 B6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022713-BCR 192 B6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR 192 B6327 CAD Model

Description

The Infineon Technologies BCR 192 B6327 PNP transistor is a high-performance device that is designed for use in a wide range of electronic circuits.

  • Maximum Current Collector: 100mA
  • VCEO Maximum: 50V
  • Package: PG-SOT23-3
  • Typical Gain (hFE) (Min): 70 @ 5mA, 5V
  • Maximum Power Dissipation: 200mW
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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