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Same model may have multiple batches, images only for reference.
BCR 569 E6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR 569 E6327

Part No BCR 569 E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 300MW SOT23-3
Datasheet
BCR 569 E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 150MHz
Maximum Power Dissipation 330mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022736-BCR 569 E6327
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Lighting, LED Lighting
Ultra Librarian 3D Model Ultra Librarian BCR 569 E6327 CAD Model

Description

The Infineon Technologies BCR 569 E6327 is a PNP pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum current collector of 500mA.

  • Collector Cut-Off Current: 100nA
  • Typical Gain (hFE): 120 @ 50mA and 5V
  • Maximum Power Dissipation: 330mW
  • Category: obsolete(EOL)
  • Package: PG-SOT23-3
  • Supply and Demand Status: balanced

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