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Same model may have multiple batches, images only for reference.
BCR116SH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR116SH6327XTSA1

Part No BCR116SH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.25W SOT363
Datasheet
BCR116SH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Frequency - Transition 150MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1022678-BCR116SH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR116SH6327XTSA1 CAD Model

Description

The Infineon Technologies BCR116SH6327XTSA1 is a pre-biased dual NPN transistor with a transition frequency of 150MHz.

  • Manufacturer: Infineon Technologies
  • Type: Pre-Biased Dual NPN Transistor
  • Transition Frequency: 150MHz
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Base Resistor: 4.7k ohms
  • Emitter Base Resistor: 47k ohms
  • Package: PG-SOT363-6
  • Maximum Power Dissipation: 250mW

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