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BCR148WE6327BTSA1

Name: BCR148WE6327BTSA1
Brand: Infineon Technologies
SKU: 437376
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	BCR148WE6327BTSA1
Manufacturer	Infineon Technologies
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 250MW SOT323-3
Datasheet	BCR148WE6327BTSA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	47k
Resistor - Emitter Base (R2) (Ohms)	47k
Typical Gain (hFE) (Min)	70 @ 5mA, 5V
Max Vce (sat)	300mV @ 500μA, 10mA
Collector Cut-off Current(Max)	100nA (ICBO)
Frequency - Transition	100MHz
Maximum Power Dissipation	250mW
Mounting	SMD (SMT)
Case / Package	PG-SOT323-3
Win Source Part Number	1022695-BCR148WE6327BTSA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian BCR148WE6327BTSA1 CAD Model

Alternative Products

Description

The Infineon Technologies BCR148WE6327BTSA1 is a NPN - Pre-Biased transistor designed for use in discrete semiconductor products.

Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current: 100nA (ICBO)
Gain (hFE) (Min): 70 @ 5mA, 5V
Package: PG-SOT323-3
Product Status: Obsolete (EOL)
Popularity: Medium
Supply and Demand: Balance

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