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Same model may have multiple batches, images only for reference.
BCR166E6433HTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR166E6433HTMA1

Part No BCR166E6433HTMA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT23-3
Datasheet
BCR166E6433HTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 160MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022699-BCR166E6433HTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCR166E6433HTMA1 CAD Model

Description

The Infineon Technologies BCR166E6433HTMA1 is a PNP-pre-biased transistor with a frequency transition of 160MHz.

  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 70 @ 5mA, 5V
  • Maximum Power Dissipation: 200mW
  • Package: PG-SOT23-3
  • Mounting: SMD (SMT)
  • Supply and Demand: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
855+ $0.0678 $57.9690
2,075+ $0.0557 $115.5775
3,215+ $0.0540 $173.6100
4,425+ $0.0522 $230.9850
5,725+ $0.0505 $289.1125
7,655+ $0.0453 $346.7715
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,400 pieces
MOQ: 855 pcs
Order Increment : 1 pcs
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