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Same model may have multiple batches, images only for reference.
BCR191E6327 Real Image
Same model may have multiple batches, images only for reference.

BCR191E6327

Part No BCR191E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description BIPOLAR DIGITAL TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200 MHz
Power - Max 200 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-1
Base Product Number BCR191
Standard Package 7,397 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 709702-BCR191E6327
Ultra Librarian 3D Model Ultra Librarian BCR191E6327 CAD Model

Description

The BCR191E6327 is a pre-biased bipolar transistor designed for discrete semiconductor applications from Infineon Technologies.

  • Series: automotive
  • AEC-Q101 Compliant: Yes
  • Transistor Type: PNP
  • Maximum Power Dissipation: 200mW
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Low Vce Saturation: 300mV @ 500µA base current and 10mA collector current
  • Operating Temperature Range: -40°C to 150°C

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425+ $0.2353 $100.0025
660+ $0.2279 $150.4140
910+ $0.2206 $200.7460
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1,570+ $0.1912 $300.1840
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