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BCR192WH6327

Name: BCR192WH6327
Brand: Infineon Technologies
SKU: 863873
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	BCR192WH6327
Manufacturer	Infineon Technologies
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	BIPOLAR DIGITAL TRANSISTOR
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr	Infineon Technologies
Package	Bulk
Product Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200 MHz
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	PG-SOT323-3-1
Base Product Number	BCR192
Standard Package	6,571 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.21.0075
Win Source Part Number	863873-BCR192WH6327
Ultra Librarian 3D Model	Ultra Librarian BCR192WH6327 CAD Model

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Description

The BCR192WH6327 is a pre-biased PNP bipolar transistor from Infineon Technologies.

Package: Bulk
Maximum Power Dissipation: 250mW
Collector-Emitter Breakdown Voltage: 50V
Maximum Collector Current (Ic): 100mA
Vce Saturation: 300mV @ 500μA (Ib), 10mA (Ic)
Collector Cutoff Current (ICBO): 100nA
DC Current Gain (hFE): 70 @ 5mA (Ic), 5V (Vce)
Operating Temperature: -55°C to 150°C

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BCR192WH6327

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