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Same model may have multiple batches, images only for reference.
BCX70GE6327 Real Image
Same model may have multiple batches, images only for reference.

BCX70GE6327

Part No BCX70GE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 5V
Power - Max 330 mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
Standard Package 7,397 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 717901-BCX70GE6327
Ultra Librarian 3D Model Ultra Librarian BCX70GE6327 CAD Model

Description

The BCX70GE6327 is an NPN bipolar transistor manufactured by Infineon Technologies. It is designed for general-purpose amplification and switching applications.

  • Maximum Power Rating: 330 mW
  • Collector-Emitter Breakdown Voltage: 45 V
  • Maximum Collector Current: 100 mA
  • Vce Saturation: 550mV @ 1.25mA base current and 50mA collector current
  • Package: surface mount
  • Temperature Range: 150°C
  • Classification: EAR99
  • REACH Regulations: unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,335+ $0.0173 $57.6955
8,335+ $0.0139 $115.8565
12,500+ $0.0139 $173.7500
16,670+ $0.0139 $231.7130
22,730+ $0.0127 $288.6710
30,000+ $0.0116 $348.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,015 pieces
MOQ: 3335 pcs
Order Increment : 1 pcs
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