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Same model may have multiple batches, images only for reference.
BCX70GE6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BCX70GE6327HTSA1

Part No BCX70GE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT-23
Datasheet
BCX70GE6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 550mV @ 1.25mA, 50mA
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022822-BCX70GE6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCX70GE6327HTSA1 CAD Model

Description

The Infineon Technologies BCX70GE6327HTSA1 is an NPN transistor designed for use in discrete semiconductor products.

  • Maximum Collector-Emitter Breakdown Voltage: 45V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE) (Min): 120 @ 2mA and 5V
  • Maximum Vce (sat): 550mV @ 1.25mA and 50mA
  • Package: PG-SOT23-3
  • Mounting Type: SMD (SMT)
  • Operating Temperature: 150°C (TJ)
  • Maximum Power Dissipation: 330mW

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3,125+ $0.0185 $57.8125
7,695+ $0.0150 $115.4250
11,540+ $0.0150 $173.1000
15,385+ $0.0150 $230.7750
20,835+ $0.0139 $289.6065
27,275+ $0.0127 $346.3925
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Availability: 9,000 pieces
MOQ: 3125 pcs
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