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BF771 E6327

Part No BF771 E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 12V SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1dB to 1.6dB @ 900MHz to 1.8GHz
Gain 10dB to 15dB
Maximum Power Dissipation 580mW
Typical Gain (hFE) (Min) 70 @ 30mA, 8V
Maximum Current Collector 80mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 201051-BF771 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BF771 E6327 CAD Model

Description

BF771 E6327 Transistor Description

The BF771 E6327 is crafted for high-gain amplification tasks. It reduces unwanted noise and enhances signal clarity for various electronic applications.

  • Features and Benefits:
    • Excellent noise-reduction capabilities
    • High gain and frequency response
    • Durable, lightweight package
  • Applications:
    • Broadband amplifiers
    • RF transmitting devices
    • High-fidelity audio projects

Engineers prefer the BF771 E6327 for its ability to minimize environmental noise while maintaining signal integrity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0028 $50.1400
125+ $0.8229 $102.8625
190+ $0.7971 $151.4490
260+ $0.7714 $200.5640
340+ $0.7457 $253.5380
450+ $0.6686 $300.8700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 800 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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