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Same model may have multiple batches, images only for reference.
BF799E6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BF799E6327HTSA1

Part No BF799E6327HTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN RF 20V SOT-23
Datasheet
BF799E6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Frequency - Transition 800MHz
Noise Figure (dB Typ @ f) 3dB @ 100MHz
Maximum Power Dissipation 280mW
Typical Gain (hFE) (Min) 40 @ 20mA, 10V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 096196-BF799E6327HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian BF799E6327HTSA1 CAD Model

Description

The BF799E6327HTSA1 is engineered for high-frequency applications, ensuring optimal amplification with minimal interference. Its reliability makes it a favorite for demanding RF tasks.

Features and Benefits:

  • High-gain characteristics for improved amplification
  • Low distortion factors enhancing performance
  • Consistent power output across various frequencies
  • Enhanced construction provides durable operational life

Applications:

  • High-frequency amplifiers
  • RF circuit designs
  • Telecommunications equipment
  • Broadcast equipment

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