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Same model may have multiple batches, images only for reference.
BFG235 Real Image
Same model may have multiple batches, images only for reference.

BFG235

Part No BFG235
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 15V SOT-223
Datasheet
BFG235 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 5.5GHz
Noise Figure (dB Typ @ f) 1.7dB @ 900MHz
Gain 12.5dB
Maximum Power Dissipation 2W
Typical Gain (hFE) (Min) 75 @ 200mA, 8V
Maximum Current Collector 300mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Win Source Part Number 201154-BFG235
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFG235 CAD Model

Description

Product Description

The BFG235 is a versatile NPN RF transistor ideal for high-frequency operations. With its low noise figure and high gain, it is excellent for applications requiring reliable performance.

Features and Benefits

  • High gain of up to 20 dB at 1 GHz, ensuring strong signal amplification.
  • Low noise operation, ideal for minimizing interference in RF systems.
  • Compact plastic package enhances design flexibility and integration.

Applications

  • RF amplifiers and mixers
  • Oscillators
  • Wireless communication devices

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