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BSP16T1G

Part No BSP16T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 300V 0.1A 1500mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 300V 0.1A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 2V @ 5mA, 50mA
Collector Cut-off Current(Max) 50μA
Typical Gain (hFE) (Min) 30 @ 50mA, 10V
Maximum Power Dissipation 1.5W
Frequency - Transition 15MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 012131-BSP16T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name BSP16
Introduction Date December 01, 1999
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BSP16T1G CAD Model

Description

The BSP16T1G from ON Semiconductor is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor is well-suited for load switch and amplifier applications due to its robust features and specifications.

Key Features

  • High Current Capability: The BSP16T1G offers a collector current of -1 A, making it suitable for applications requiring a significant amount of current.
  • Low Collector-Emitter Saturation Voltage: It has a low V<sub>CE(sat) of typically -0.5 V, which contributes to its efficiency by minimizing voltage drop and power loss during operation.
  • High Power Dissipation: With a power dissipation of 1.5 W, this transistor can handle higher power applications without overheating.
  • Complementary NPN Type: The complementary NPN type is available, allowing for push-pull amplifier configurations and other complementary applications.

Electrical Characteristics

  • Collector-Emitter Breakdown Voltage: The device has a minimum breakdown voltage of -60 V, which ensures stable operation under high voltage conditions.
  • DC Current Gain: It features a high DC current gain (h<sub>FE) range of 100 to 250 at -0.1 A, which provides good amplification characteristics for signal processing.

Package and Environmental Compliance

The BSP16T1G is housed in a SOT-223 package, which is compact yet capable of handling moderate levels of thermal and electrical stress. This package is designed for surface-mount technology (SMT), making it suitable for automated manufacturing processes.

ON Semiconductor is committed to environmental sustainability, and the BSP16T1G is no exception. It complies with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from certain hazardous materials commonly used in electronics. This compliance makes the BSP16T1G an environmentally-friendly choice for electronic designers and manufacturers.

Applications

The BSP16T1G is ideal for a variety of applications including, but not limited to, power management, load switching, and signal amplification. Its high current capability and low saturation voltage make it an excellent choice for power regulation in consumer electronics, automotive systems, and industrial controls.

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Pricing & Ordering

Quantity Unit Price Ext. Price
435+ $0.1342 $58.3770
1,050+ $0.1102 $115.7100
1,625+ $0.1067 $173.3875
2,240+ $0.1033 $231.3920
2,895+ $0.0999 $289.2105
3,875+ $0.0896 $347.2000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,800 pieces
MOQ: 435 pcs
Order Increment : 1 pcs
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