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BFP840FESDH6327XTSA1

Part No BFP840FESDH6327XTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description IC TRANSISTOR RF NPN TSFP-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 2.6V
Frequency - Transition 85GHz
Noise Figure (dB Typ @ f) 0.75dB @ 5.5GHz
Gain 35dB
Maximum Power Dissipation 75mW
Typical Gain (hFE) (Min) 150 @ 10mA, 1.8V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-TSFP
Win Source Part Number 1023251-BFP840FESDH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian BFP840FESDH6327XTSA1 CAD Model

Description

The Infineon Technologies BFP840FESDH6327XTSA1 is an NPN transistor with a gain of 35dB and a frequency transition of 85GHz.

  • Maximum Current Collector: 35mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 2.6V
  • Typical Gain (hFE) (Min): 150 @ 10mA, 1.8V
  • Maximum Power Dissipation: 75mW
  • Noise Figure: 0.75dB @ 5.5GHz
  • Package: 4-TSFP
  • Mounting: SMD (SMT)
  • Supply and Demand: balanced
  • Quantity per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6171 $52.4535
200+ $0.5063 $101.2600
310+ $0.4905 $152.0550
425+ $0.4747 $201.7475
545+ $0.4589 $250.1005
730+ $0.4114 $300.3220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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