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Same model may have multiple batches, images only for reference.
BFR183WH6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BFR183WH6327XTSA1

Part No BFR183WH6327XTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS RF NPN 12V 65MA SOT323
Datasheet
BFR183WH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.4dB @ 900MHz to 1.8GHz
Gain 18.5dB
Maximum Power Dissipation 450mW
Typical Gain (hFE) (Min) 70 @ 15mA, 8V
Maximum Current Collector 65mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 114628-BFR183WH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian BFR183WH6327XTSA1 CAD Model

Description

BFR183WH6327XTSA1 - Advanced RF Transistor

The BFR183WH6327XTSA1 is a premium NPN RF transistor tailored for advanced communication systems. It excels in delivering superior amplification with minimal distortion, making it a top choice for RF design engineers.

  • Applications:
    • Broadcast transmitters
    • RF amplifiers in base stations
    • Military communication systems
  • Features and Benefits:
    • Enhanced linearity for precision amplification
    • High transition frequency for extended bandwidth support
    • Reliable performance under varying environmental conditions
  • Additional Details:
    • Optimized for low power loss
    • RoHS compliant
    • Customizable for specific frequency bands

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